Using Fourier-Plane Imaging Microscopy for Determining Transition-Dipole-Moment Orientations in Organic Light-Emitting Devices

• DOI: 10.1103/physrevapplied.14.034048
• Publication Date: 2020-09-17T15:47:27Z
• Authors: Jongchan Kim; Haonan Zhao; Shaocong Hou; Mandeep Khatoniar; Vinod Menon; Stephen R. Forrest
• Keywords: 02 engineering and technology; 0210 nano-technology

We use Fourier-plane imaging microscopy (FIM) to determine the transition-dipole-moment orientation in doped organic emissive thin films. The use of FIM enables precise, sensitive, and rapid measurement of dipole orientation in the emission layer of an organic light-emitting device (OLED). An optical model of a stratified birefringent multilayer is introduced for interpreting results obtained by FIM. Using the model, we determine the average orientation of transition-dipole-moment vectors of three phosphorescent dopant emitters. The dipole alignment measured by FIM quantitatively explains the difference in OLED efficiencies using these archetype dopant molecules. FIM provides a nondestructive tool to measure and ultimately improve the outcoupling efficiency of OLEDs and other light-emitting devices.