Identification of Néel Vector Orientation in Antiferromagnetic Domains Switched by Currents in NiO/Pt Thin Films

• DOI: 10.1103/physrevapplied.15.034047
• Publication Date: 2021-03-16T17:24:17Z
• Authors: C. Schmitt; L. Baldrati; L. Sanchez-Tejerina; F. Schreiber; A. Ross; M. Filianina; S. Ding; F. Fuhrmann; R. Ramos; F. Maccherozzi; D. Backes; M.-A. Mawass; F. Kronast; S. Valencia; E. Saitoh; G. Finocchio; M. Kläui
• Keywords: Condensed Matter - Materials Science; 530 Physics; ddc:530; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 530 Physik; 530; 01 natural sciences; Antiferromagnetism; Nickel oxide; Thin films; 0103 physical sciences; Magnetization switching ; Magnetic domains ; Magnetoelastic effect ; Spintronics ; Magnetic insulators

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable design devices working at THz frequencies. Focusing on collinear insulating $\mathrm{Ni}\mathrm{O}/\mathrm{Pt}$ thin films as materials platform, we identify crystallographic orientation domains that can be switched by currents and quantify N\'eel-vector direction changes. We demonstrate switching between different T current pulses, finding in these along [$\ifmmode\pm\else\textpm\fi{}5$ $\ifmmode\pm\else\textpm\fi{}5$ 19], compared bulk $⟨112⟩$ directions. The final state in-plane component N\'eel vector ${\mathbf{n}}_{\mathrm{IP}}$ after pulses $\mathbf{j}$ $[1\phantom{\rule{0.1em}{0ex}}\ifmmode\pm\else\textpm\fi{}1\phantom{\rule{0.1em}{0ex}}0]$ directions ${\mathbf{n}}_{\mathrm{IP}}\ensuremath{\parallel}\mathbf{j}$. By comparing observed strain films, assuming this variation arises solely from magnetoelastic effects, magnitude coupling coefficient ${b}_{0}+2{b}_{1}=3\ifmmode\times\else\texttimes\fi{}{10}^{7}\mathrm{J}/{\mathrm{m}}^{3}$. This information key for understanding current-induced antiferromagnets use such active elements spintronic devices.