Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

• DOI: 10.1103/physrevapplied.15.064022
• Publication Date: 2021-06-09T16:19:54Z
• Authors: John B. S. Abraham; Cameron Gutgsell; Dalibor Todorovski; Scott Sperling; Jacob E. Epstein; Brian S. Tien-Street; Timothy M. Sweeney; Jeremiah J. Wathen; Elizabeth A. Pogue; Peter G. Brereton; Tyrel M. McQueen; Wesley Frey; B. D. Clader; Robert Osiander
• Keywords: Quantum Physics; FOS: Physical sciences; 02 engineering and technology; Quantum Physics (quant-ph); 0210 nano-technology

Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques electrical optical microfabricated device integration. The negatively charged silicon vacancy one of the leading defects studied in carbide near telecom photoemission, high number, nearly temperature independent ground state zero field splitting. We report realization nanoTesla shot-noise limited ensemble magnetometry on optically detected magnetic resonance with 4H carbide. By coarsely optimizing anneal parameters minimizing power broadening, we achieved sensitivity 3.5 nT/$\sqrt{Hz}$. This was accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than Watt. work demonstrates that provides low-cost simple approach sensing fields.