Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

• DOI: 10.1103/physrevb.101.094429
• Publication Date: 2020-03-23T16:14:06Z
• Authors: M. Wang; C. Andrews; S. Reimers; O. J. Amin; P. Wadley; R. P. Campion; S. F. Poole; J. Felton; K. W. Edmonds; B. L. Gallagher; A. W. Rushforth; O. Makarovsky; K. Gas; M. Sawicki; D. Kriegner; J. Zubáč; K. Olejník; V. Novák; T. Jungwirth; M. Shahrokhvand; U. Zeitler; S. S. Dhesi; F. Maccherozzi
• Keywords: Magnetocrystalline anisotropy; Néel temperature; Tetragonal crystal system

Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques anisotropic magnetoresistance. While these observations open up opportunities use antiferromagnets for memory devices, different characterization methods are required a better understanding of those mechanisms. Here we report field induced rotation Neel vector epitaxial tetragonal CuMnAs thin films. Using soft x-ray linear dichroism spectroscopy, photoemission electron microscopy, integral magnetometry magneto-transport methods, demonstrate spin-flop switching continuous spin reorientation films with uniaxial biaxial anisotropies, respectively. From field-dependent measurements magnetization magnetoresistance, obtain key material parameters including magnetoresistance coefficients, magnetocrystalline anisotropy, exchange fields.