Competition between magnetic order and charge localization in Na2IrO3 thin crystal devices
Quantum Physics
Condensed Matter - Mesoscale and Nanoscale Physics
Strongly Correlated Electrons (cond-mat.str-el)
MSD-Quantum Materials
FOS: Physical sciences
Condensed Matter Physics
530
01 natural sciences
Physical sciences
Condensed Matter - Strongly Correlated Electrons
Engineering
MSD-General
Chemical sciences
Physical Sciences
cond-mat.mes-hall
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
0103 physical sciences
Electronics
Sensors and Digital Hardware
cond-mat.str-el
DOI:
10.1103/physrevb.101.235415
Publication Date:
2020-06-09T13:45:02Z
AUTHORS (18)
ABSTRACT
Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na$_2$IrO$_3$ has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by Angle Resolved Photoemission Spectroscopy (ARPES) experiments, that electronic transport in Na$_2$IrO$_3$ is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na$_2$IrO$_3$, as well as on external electric fields. Electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na$_2$IrO$_3$ thin crystals devices, offering an alternative approach to study insulating layered materials.
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