Identifying the domain-wall spin structure in antiferromagnetic NiO/Pt

• DOI: 10.1103/physrevb.107.184417
• Publication Date: 2023-05-09T17:01:56Z
• Authors: C. Schmitt; L. Sanchez-Tejerina; M. Filianina; F. Fuhrmann; H. Meer; R. Ramos; F. Maccherozzi; D. Backes; E. Saitoh; G. Finocchio; L. Baldrati; M. Kläui
• Keywords: Domain wall (magnetism); Non-blocking I/O

The understanding of antiferromagnetic domain walls, which are the interface between domains with different N\'eel order orientations, is a crucial aspect to enable use materials as active elements in future spintronic devices. In this work, we demonstrate that NiO/Pt bilayers arbitrary-shaped structures can be generated by switching driven electrical current pulses. T domains, separated from each other wall whose spins pointing toward average direction two rather than common axis planes. Interestingly, same for whole indicating absence strong Lifshitz invariants. micromagnetically modeled strain distributions NiO thin film induced MgO substrate, deviating bulk anisotropy. From our measurements determine domain-wall width have full at half maximum $\mathrm{\ensuremath{\Delta}}=98\ifmmode\pm\else\textpm\fi{}10$ nm, demonstrating confinement.