Conductance oscillations in quantum point contacts of InAs/GaSb heterostructures

• DOI: 10.1103/physrevb.93.195305
• Publication Date: 2016-05-09T18:08:21Z
• Authors: Michał Papaj; Łukasz Cywiński; Jerzy Wróbel; Tomasz Dietl
• Keywords: Quantum wire

We study quantum point contacts in two-dimensional topological insulators by means of transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te wells. In InAs/GaSb, the density edge states shows an oscillatory decay as a function distance to edge. This is contrast behavior HgTe wells, which into bulk simple exponential manner. The difference between two materials brought about spatial separation electrons holes affects magnitudes parameters describing particle-hole asymmetry strength intersubband coupling within Bernevig-Hughes-Zhang model. show that character wave-function impacts directly dependence contact conductance on constriction width Fermi energy, can be verified experimentally serves accurately determine values relevant parameters. case heterostructures, magnitude oscillates following oscillations state penetration, whereas wells single switching from transmitting reflecting predicted.