A high current enhancement type N-channel InGaAs MOSFET on InP substrate with a maximum drain current of 1.3 A/mm

• DOI: 10.1109/icet.2016.7813206
• Publication Date: 2017-01-19T21:45:08Z
• Authors: Muhammad Ali; Junaid Saeed
• Keywords: Transconductance; Drain-induced barrier lowering; Channel length modulation

In this paper, a high performance inversion type enhancement mode N-channel <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.65</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.35</sub> As MOSFET has been presented. A maximum drain current of more than 1.3 A/mm achieved with transconductance 430 mS/mm. This value is nearly 25% greater that previously reported in literature. gate threshold voltage 0.8 V for length 0.6 μm, which sufficiently to ensure fail safe operation the device integrated circuit environment. Extensive simulations have performed order analyze effect varying on gate-source voltage. Furthermore, thorough investigation conducted about variations under doping concentration and source regions. The extrapolated linearly from 1 micron wide device.