Interfacial adhesion of copper-low k interconnects

• DOI: 10.1109/iitc.2001.930077
• Publication Date: 2002-11-13T15:55:34Z
• Authors: E. Andideh; T. Scherban; B. Sun; J. Blaine; C. Block; B. Jin
• Keywords: 0103 physical sciences; 01 natural sciences

Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m/sup 2/ is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to low k dielectric films than CVD barriers. Surface treatments of the dielectric film before barrier deposition are found to strongly modulate CVD barrier to spin-on polymer adhesion.