Low FSR Mode-Locked Laser Based on InP-Si3N4 Hybrid Integration

• DOI: 10.1109/jlt.2021.3089322
• Publication Date: 2021-06-15T19:56:00Z
• Authors: Yasmine Ibrahimi; Sylvain Boust; Quentin Wilmart; Jean-Francois Paret; Alexandre Garreau; Karim Mekhazni; Catherine Fortin; Francois Duport; Jean-Marc Fedeli; Corrado Sciancale...; Stephanie Garcia; Frederic van Dijk
• Keywords: 0301 basic medicine; 03 medical and health sciences; Bragg gratings; semiconductor lasers; frequency comb generation; mode-locked laser; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Generation of optical frequency combs (OFC) using semiconductor laser sources has been an active research topic for years, since they offer good performances many applications without the bulky and expensive aspects ion doped fiber or crystal based sources. In this paper, we demonstrate generation low free spectral range mode-locked hybrid III-V/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> butt coupling. We start by describing design fabrication process R-SOA chip made at our laboratory, passive Si having losses measured to be around 6 dB/m. then report integration results mode locking. Our a repetition rate 360 MHz, which is, best knowledge, lowest achieved integrated laser. The comb generated 30 dB bandwidth 2.8 nm (349 GHz). Finally, show demonstration harmonic locking up sixth harmonic.