A Compact 112-Gbaud PAM-4 Silicon Photonics Transceiver for Short-Reach Interconnects

• DOI: 10.1109/jlt.2022.3141906
• Publication Date: 2022-01-11T20:39:05Z
• Authors: David Weng U. Chan; Gai Zhou; Xiong Wu; Yeyu Tong; Junwei Zhang; Chao Lu; Alan Pak Tao Lau; Hon Ki Tsang
• Keywords: Photodiode; Transceiver; Modulation (music)

For next generation highly integrated transceivers, silicon photonics (SiP) has attracted widespread interest in using mature CMOS production processes to manufacture high-yield, low-cost photonic circuits (PIC) with the potential for integration electronics. SiP now routinely integrate GeSi electroabsorption modulators (EAM) and waveguide photodiodes which have high responsivity possess 3-dB electro-optic bandwidth of over 65 GHz. Their ultra-compact dimensions make it possible multi-channel transceivers be realized on a small chip area. In this paper, we demonstrate high-speed capability these devices incorporated optimized digital signal processing (DSP) 100 Gbaud+ PAM-4 signaling. Using GeSi-EAM GeSi-photodiode fabricated at commercial foundry, carried out intensity modulation direct detection (IM-DD) transmission experiments C-band PAM-4, both back-to-back SSMF 1 km 1.5 km. Under 6-dB system ∼43GHz attained, help DSP equalization, record 112 Gbaud (224 Gb/s), 108 (216 Gb/s) (200 are achieved back-to-back, respectively, bit-error-rate (BER) below hard-decision forward-error-correction (HD-FEC) threshold 3.8E-3.