Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range

• DOI: 10.1109/jlt.2022.3169008
• Publication Date: 2022-04-22T19:35:01Z
• Authors: Bingtian Guo; Xiao Jin; Seunghyun Lee; Sheikh Z. Ahmed; Andrew H. Jones; Xingjun Xue; Baolai Liang; Harry I. J. Lewis; Sri H. Kodati; Dekang Chen; Theodore J. Ronni...; Christoph H. Grein; Avik W. Ghosh; Sanjay Krishna; John P. R. David; Joe C. Campbell
• Keywords: 0211 other engineering and technologies; 02 engineering and technology

Digital alloy and random Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.15</sub> As xmlns:xlink="http://www.w3.org/1999/xlink">0.56</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">0.44</sub> avalanche photodiodes (APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a promising multiplication layer candidate for separate absorption, charge, structure APDs with high gain-bandwidth product. Characterization of the impact ionization coefficients electrons ( <italic xmlns:xlink="http://www.w3.org/1999/xlink">α</i> ) holes xmlns:xlink="http://www.w3.org/1999/xlink">β</i> plays an important role in simulation photodiodes. The gain curves eight p <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -i-n n -i-p covering wide range widths have been used determine electric field dependence . A large coefficient ratio between that was seen across range. Simulations these structures using path length (RPL) model gave good agreement experimental results over almost three orders magnitude, mixed injection method employed verify extracted coefficients. Interestingly, no difference digital This knowledge beneficial future utilization xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> system.