800 Gbit/s QSFP-DD Transceiver Based on Thin-Film Lithium Niobate Photonic Integrated Circuit

• DOI: 10.1109/jlt.2023.3238844
• Publication Date: 2023-01-23T19:42:06Z
• Authors: Heng Li; Lane Luo; Mingzhi Lu; Quanan Chen; Jin Yu; Rui Huang; Jiangen He; Yongqian Tang; Allen Zheng; Zuxin Zhong; Celia Lei; Hua Liu; Xiaohan Li; Xiangyang Dai; Lirong Huang; Qiaoyin Lu; Weihua Guo
• Keywords: Transceiver; Modulation (music)

800G Ethernet is expected to be the dominant solution for next generation inter- and intra-data-center connections. To boost transmission capacity 800 Gb/s, utilizing multi-level pulse amplitude modulation (PAM) transmitting format adopting multiple lanes are competitive solutions. In this paper, we demonstrate a PAM4-modulated QSFP-DD transceiver integrated with two 4 × 100G thin-film lithium niobate (TFLN) DR4 modulator chips. The chips have 13.5 dB insertion loss (including inherent 3 6 splitting loss) one chip requires 17 dBm light source. EO response has 40 GHz bandwidth at 2.3 electric reflection keeps below −12 dB. eight channels of clear open eye patterns 1.5 Vpp driving voltage under 53.125 Gbaud PAM-4 all ERs above 4.03 TDECQ's 2.13 sensitivity receiver around −8.6 after 2 km back-to-back BER forward error correcting threshold. It demonstrated that our meets 400GBASE-DR4 standards packaging requirements simultaneously. This first time array based on TFLN reported best knowledge.