An Economical Three-Dimension (3-D) Hall Device on 0.15-μm Bipolar-CMOS-DMOS (BCD) Platform

• DOI: 10.1109/jsen.2024.3368045
• Publication Date: 2024-02-28T18:59:59Z
• Authors: Long Zhang; Guiqiang Zheng; Yichen Li; Xueqi Li; Xiaofeng Sun; Jie Ma; Min Zou; Dejin Wang; Sen Zhang; Yongjia Li; Siyang Liu; Weifeng Sun

This article presents a three-dimension (3-D) Hall device fabricated on 0.15- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> bipolar-CMOS-DMOS (BCD) platform without additional masks or processes. The 3-D is designed to detect the three-axis magnetic field in space with lateral and vertical components. features shallow-trench-isolation (STI) structure thin magnetic-sensitive well. has an input resistance of 25.1 notation="LaTeX">$\text{K}\Omega $ its current-related sensitivity 378 V/AT, appropriated size geometry. Its fully isolated guarantees high stability for precise measurement. utilizes deep well provide more rotation current. By optimizing position electrodes width device, measured at 10.4 notation="LaTeX">$\text{k}\Omega reaches 161 V/AT. proposed indicates cost-efficient feasibility fabricating high-performance sensor chips BCD platform.