A 27–46-GHz Low-Noise Amplifier With Dual-Resonant Input Matching and a Transformer-Based Broadband Output Network

• DOI: 10.1109/lmwc.2021.3059592
• Publication Date: 2021-02-17T01:46:14Z
• Authors: Yaolong Hu; Taiyun Chi
• Keywords: Parasitic capacitance; Return loss; Common gate; Balun; Wideband

This letter presents a 27-46-GHz low-noise amplifier (LNA) in 45-nm CMOS silicon-on-insulator (SOI) process. Two circuit techniques are employed to enhance the LNA bandwidth. First, intrinsic gate-to-drain parasitic capacitance of input transistor and frequency-dependent behavior first-stage load impedance explored realize dual resonances for S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> , thus extending matching Second, network synthesis methodology is presented convert canonical second-order bandpass filter transformer-based output network, which realizes broadband power gain while occupying only one inductor footprint. In measurements, 3-dB bandwidth from 25.5 50 GHz with peak 21.2 dB at 37.8 GHz. The effective limited by 10-dB return loss bandwidth, 27 46 minimum noise figure (NF) 2.4 27.8 GHz, NF remains <; 4.2 within measured IIP3 -11.0 dBm 38 25.5-mW dc consumption.