Quaternary InGaAsSb Thermophotovoltaic Diodes

• DOI: 10.1109/ted.2006.885087
• Publication Date: 2006-12-13T20:27:57Z
• Authors: Michael W. Dashiell; John F. Beausang; Hassan Ehsani; G. J. Nichols; David M. Depoy; Lee R. Danielson; Phil Talamo; Kevin D. Rahner; Edward J. Brown; Steven R. Burger; Patrick M. Foursp...; William F. Topper; P. F. Baldasaro; Christine A. Wang; Robin K. Huang; Michael K. Connors; George W. Turner; Zane A. Shellenba...; Gordon Taylor; Jizhong Li; Ramon Martinelli; Dmitry Donetski; Sergei Anikeev; Gregory L. Belenky; Serge Luryi
• Keywords: Thermophotovoltaic

In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) n xmlns:xlink="http://www.w3.org/1999/xlink">TPV</sub> 19.7% PD 0.58 W/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , respectively, for a radiator temperature T xmlns:xlink="http://www.w3.org/1999/xlink">radiator</sub> 950 degC, diode xmlns:xlink="http://www.w3.org/1999/xlink">diode </sub> 27 0.53 Practical limits energy established using recombination coefficients optical properties front surface filters which 0.53-eV 28% 0.85 at above operating temperatures. The most severe performance imposed 1) open-circuit voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> ) due intrinsic Auger 2) parasitic photon absorption inactive regions module. Experimentally, V is 15% below practical limit processes. Analysis electrical versus architecture indicates that thus limited extrinsic processes such as through bulk defects