An 8kb spin-orbit-torque magnetic random-access memory

• DOI: 10.1109/vlsi-tsa51926.2021.9440096
• Publication Date: 2021-05-28T16:35:12Z
• Authors: Guan-Long Chen; I-Jung Wang; Po-Shao Yeh; Sih-Han Li; Shan-Yi Yang; Yu-Chen Hsin; Hsin-Tsun Wu; Hsu-Ming Hsiao; Yao-Jen Chang; Kuan-Ming Chen; SK Ziaur Rahaman; Hsin-Han Lee; Yi-Hui Su; Fang-Ming Chen; Jeng-Hua Wei; Shyh-Shyuan Sheu; Chih-I Wu; Denny Tang
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show the cell design, integration process to CMOS wafers and the cell properties and array statistics. In this cell and array designs, we show the low switching current capability for the low power application and good thermal stability.