Synaptic and resistive switching behaviors of Sm‐doped HfO2 films for bio‐inspired neuromorphic calculations

• DOI: 10.1111/ijac.14693
• Publication Date: 2024-02-02T07:59:26Z
• Authors: Jian‐Yuan Zhu; Jia‐Jia Liao; Jian‐Hao Feng; Yan‐Ping Jiang; Xin‐Gui Tang; Xiao‐Bin Guo; Wen‐Hua Li; Zhen‐Hua Tang; Yi‐Chun Zhou
• Keywords: Neuromorphic engineering; Neural facilitation

Abstract Artificial neural network‐based computing is anticipated to surpass the von Neumann bottleneck of traditional computers, thus dramatically boosting computational efficiency and showing a wide range promising applications. In this paper, sol−gel deposition was used prepare thin films samarium‐doped hafnium dioxide (Sm:HfO 2 ). When Sm doped at concentration 4%, it mimics biological synapses; meantime, by voltage scanning, an obvious mimicry resistive switching can be detected, demonstrating that technology may applied simulate synapse characteristics, including long‐term potentiation (depression), short‐term paired‐pulse facilitation, learning rules spike‐time‐dependent plasticity. Additionally, pulsed network built on MNIST dataset test memristor's capacity handle visual input. The findings show possibility synthetic synapses in artificial intelligence systems integrate neuromorphic with synaptic brain activity.