MnO2 Thin Film Electrodes for Enhanced Reliability of Thin Glass Capacitors

• DOI: 10.1111/jace.13774
• Publication Date: 2015-07-31T06:15:05Z
• Authors: Betul Akkopru‐Akgun; Susan Trolier‐McK...; Michael T Lanagan
• Keywords: Borosilicate glass; Dielectric strength

Many dielectric thin films for energy storage capacitors fail by thermal breakdown events under high‐field drive conditions. The lifetime of the device can be improved conditions where current path within defect regions in dielectrics is eliminated. Self‐healing electrodes were developed depositing a manganese dioxide (MnO 2 ) film between glass substrate and an aluminum film. For this purpose, MnO on boroaluminosilicate fabricated via chemical solution deposition heat‐treated at temperatures range 500°C–900°C. α‐MnO structure was stabilized Ba 2+ insertion to form hollandite structure. phase transition temperature Mn O 3 strongly dependent concentration, with 600°C 675°C concentrations [Ba]/[Mn] = 0.04 0.1, respectively. electrical resistivity increased from 4.5 Ω·cm 10 5 . Both strength associated cleared electrode area interlayer Al borosilicate glass. enhancement related self‐healing. redox reaction also proved RAMAN spectroscopy following breakdown.