Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

• DOI: 10.1111/jace.14597
• Publication Date: 2016-11-02T09:35:08Z
• Authors: Ahmad Faraz; Tuhin Maity; Michael Schmidt; Nitin Deepak; Saibal Roy; Martyn E. Pemble; Roger W. Whatmore; Lynette Keeney
• Keywords: Ceramics; Technology; POLARIZATION; Ferroelectricity; ELECTROMECHANICS; multiferroics; Multiferroics; Thin films; Materials Science; ferroelectricity/ferroelectric materials; EPITAXIAL-FILMS; 02 engineering and technology; 530; BIFEO3; FERROMAGNETISM; ENHANCEMENT; magnetoelectrics; OXIDES; 0912 Materials Engineering; Materials; ferromagnetism/ferromagnetic materials; Science & Technology; Ferroelectric materials; 600; ROOM-TEMPERATURE; thin films; Magnetoelectrics; Ferromagnetism; Ferromagnetic materials; 0210 nano-technology; Materials Science, Ceramics; 0913 Mechanical Engineering

AbstractMultiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters could provide a means for data storage whereby bits could be written electrically and read magnetically, or vice versa. Thin films of Aurivillius phase Bi6Ti2.8Fe1.52Mn0.68O18, previously prepared by a chemical solution deposition (CSD) technique, are multiferroics demonstrating magnetoelectric coupling at room temperature. Here, we demonstrate the growth of a similar composition, Bi6Ti2.99Fe1.46Mn0.55O18, via the liquid injection chemical vapor deposition technique. High‐resolution magnetic measurements reveal a considerably higher in‐plane ferromagnetic signature than CSD grown films (MS=24.25 emu/g (215 emu/cm3), MR=9.916 emu/g (81.5 emu/cm3), HC=170 Oe). A statistical analysis of the results from a thorough microstructural examination of the samples, allows us to conclude that the ferromagnetic signature can be attributed to the Aurivillius phase, with a confidence level of 99.95%. In addition, we report the direct piezoresponse force microscopy visualization of ferroelectric switching while going through a full in‐plane magnetic field cycle, where increased volumes (8.6% to 14% compared with 4% to 7% for the CSD‐grown films) of the film engage in magnetoelectric coupling and demonstrate both irreversible and reversible magnetoelectric domain switching.