Mn‐ and Mn/Cu‐doped PIN‐PMN‐PT piezoelectric ceramics for high‐power transducers

• DOI: 10.1111/jace.17347
• Publication Date: 2020-07-05T06:15:06Z
• Authors: Beecher H. Watson; Michael J. Brova; Mark A. Fanton; Richard J. Meyer; Gary L. Messing
• Keywords: Figure of Merit; Dielectric loss

Abstract The effects of acceptor doping with manganese as either MnO 2 or MnNb O 6 (MnN) CuO on the dielectric, ferroelectric, and piezoelectric properties PIN‐PMN‐PT ceramics were investigated. 2% ‐doped (6Pb(Mn 1/3 Nb 2/3 )O 3 ‐25Pb(In 1/2 ‐34Pb(Mg ‐35PbTiO ) possessed hard such high coercive field ( E C 11.7 kV/cm, low dielectric loss (tan δ 0.7%, electromechanical quality factor Q M 1011. These diminished in because lower oxygen vacancy defect concentration, exaggerated grain growth resulted >20 µm size. Co‐doping mol% 0.5 retained hardened 9.6 tan 0.6%, 1029. + Cu co‐doped display excellent figures merit for resonance off‐resonance applications well energy conversion efficiencies which make them promising candidates high‐power transducer elements.