Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications

• DOI: 10.1117/12.2031055
• Publication Date: 2013-08-01T22:35:21Z
• Authors: Beata Ściana; Damian Radziewicz; Damian Pucicki; Jarosław Serafińczuk; Wojciech Dawidowski; Katarzyna Bielak; Mikołaj Badura; Łukasz Gelczuk; Marek Tłaczała; Magdalena Latkowska; Paulina Kamyczek; Jaroslav Kováč; Martin Florovič; Andrej Vincze
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

GaAsN and InGaAsN semiconductor alloys with a small amount of nitrogen, so called dilute nitrides, are especially attractive for telecom lasers and very efficient multijunction solar cells applications. The epitaxial growth of these materials using MBE and MOVPE is a big challenge for technologists due to the large miscibility gap between GaAs and GaN. Additionally, elaboration of the growth process of quaternary alloys InGaAsN is more complicated than GaAsN epitaxy because a precise determination of their composition requires applying different examination methods and comparison of the obtained results. This work presents the influence of the growth parameters on the properties and alloy composition of the triple quantum wells 3×InGaAsN/GaAs grown by atmospheric pressure metal organic vapour phase epitaxy AP MOVPE. Dependence of the structural and optical parameters of the investigated heterostructures on the growth temperature and the nitrogen source concentration in the reactor atmosphere was analyzed. Material quality of the obtained InGaAsN quantum wells was studied using high resolution X-Ray diffraction HRXRD, contactless electro-reflectance spectroscopy CER, photoluminescence PL, secondary ion mass spectrometry SIMS, photocurrent PC and Raman RS spectroscopies, deep level transient spectroscopy DLTS and transmission electron microscopy TEM.