Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size

• DOI: 10.1117/12.2209724
• Publication Date: 2016-02-25T20:46:26Z
• Authors: Varun S. Kamboj; Philipp Braeuning...; Piran R. Kidambi; David S. Jessop; Angadjit Singh; Juraj Sibik; Yuan Ren; Stephan Hofmann; J. Axel Zeitler; Harvey E. Beere; David A. Ritchie
• Keywords: 02 engineering and technology; 0210 nano-technology

We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ~65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.