EUV-mask pattern inspection using current DUV reticle inspection tool

• DOI: 10.1117/12.728935
• Publication Date: 2007-05-30T22:13:31Z
• Authors: Tsukasa Abe; Akiko Fujii; Shiho Sasaki; Hiroshi Mohri; Hidemichi Imai; Hironobu Takaya; Yasushi Sato; Naoya Hayashi; Yumiko Maenaka
• Keywords: Reticle; Extreme Ultraviolet Lithography; Photomask; Buffer (optical fiber); Automated optical inspection

EUV mask pattern inspection was investigated using current DUV reticle tool. Designed defect of 65nm node and 45nm were prepared. We compared sensitivity between before buffer etch after pattern, die to mode database mode. Inspection difference not observed pattern. In addition inspection, wafer print simulation program investigated. Simulation results result. confirmed tool has potential for inspection.