Near-infrared photodetectors based on mercury indium telluride single crystals

• DOI: 10.1117/12.756473
• Publication Date: 2007-11-08T15:45:53Z
• Authors: Xiaolei Zhang; Weiguo Sun; Zhengxiong Lu; Liang Zhang; Lan Zhao; JiaXin Ding; Guoqing Yan
• Keywords: Mercury cadmium telluride; Passivation

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid negative results non-rectifier contacts nature, we have investigated oxidation of clean MIT surfaces an insulating layer overcome this disadvantage metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown plasma enhance chemical vapor (PECVD). Previously cleaned wafers were dipped boiled in solution, which consists mixture bromine organic solvent ratio 1:50. By way using these films as intermediate slightly insulator, a fast-response based surface-barrier been developed. Pt used TCE frontal vacuum magnetron sputtering (VMS). The current-voltage characteristic described quantitatively energy diagram found parameters barrier. Details process, diodes, well fabrication characterizations are discussed.