In situ recombination junction between p-Si and TiO 2 enables high-efficiency monolithic perovskite/Si tandem cells

• DOI: 10.1126/sciadv.aau9711
• Publication Date: 2018-12-15T00:19:25Z
• Authors: Heping Shen; Stefan T. Omelchenko; Daniel A. Jacobs; Sisir Yalamanchili; Yimao Wan; Di Yan; Pheng Phang; The Duong; Yiliang Wu; Yanting Yin; Christian Samundsett; Jun Peng; Nandi Wu; Thomas P. White; Gunther G. Andersson; Nathan S. Lewis; Kylie R. Catchpole
• Keywords: Tandem

Increasing the power conversion efficiency of silicon (Si) photovoltaics is a key enabler for continued reductions in cost solar electricity. Here, we describe two-terminal perovskite/Si tandem design that increases Si cell's output simplest possible manner: by placing perovskite cell directly on top bottom cell. The advantageous omission conventional interlayer eliminates both optical losses and processing steps enabled low contact resistivity attainable between n-type TiO2 Si, established here using atomic layer deposition. We fabricated proof-of-concept tandems homojunction passivating heterojunction cells to demonstrate broad applicability interlayer-free concept. Stabilized efficiencies 22.9 24.1% were obtained tandems, respectively, which could be readily improved reducing elsewhere device. This work highlights potential emerging enable low-cost, high-efficiency devices through straightforward integration with commercially relevant cells.