Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains

• DOI: 10.1126/sciadv.aaw8337
• Publication Date: 2019-08-09T23:14:08Z
• Authors: Li Lin; Jiayu Li; Qinghong Yuan; Qiucheng Li; Jincan Zhang; Luzhao Sun; Dingran Rui; Zhaolong Chen; Kaicheng Jia; Mingzhan Wang; Yanfeng Zhang; Mark H. Rummeli; Ning Kang; H. Q. Xu; Feng Ding; Hailin Peng; Zhongfan Liu
• Keywords: Single-Crystal Graphene; Doped Monolayer Graphene; 01 natural sciences; Low-Temperature Growth; Carbon; 0104 chemical sciences; Roadmap; Chemical-Vapor-Deposition; Dopants; Gas; Transparent; 1000 General; P-N-Junctions; Research Articles

Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However introduction scattering centers limits this technique because reduced carrier mobilities conductivities resulting material. Here, we demonstrate a rapid graphitic nitrogen cluster-doped monolayer single crystals on Cu foil remarkable mobility 13,000 cm2 V-1 s-1 greatly sheet resistance only 130 ohms square-1. The exceedingly large high n-doping level was realized by (i) incorporation nitrogen-terminated carbon clusters suppress (ii) elimination all defective pyridinic oxygen etching. Our study opens up an avenue for high-mobility/conductivity doped tunable work functions scalable graphene-based electronic device applications.