A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

• DOI: 10.1126/sciadv.aaz4948
• Publication Date: 2020-04-10T23:11:16Z
• Authors: Satyaprasad P. Se...; Mojtaba Abdi-Jalebi; Varun S. Kamboj; Remington Carey; Ravichandran Shiv...; Tian Tian; Guillaume Schweicher; Junzhan Wang; Nadja Giesbrecht; Daniele Di Nuzzo; Harvey E. Beere; Pablo Docampo; David A. Ritchie; David Fairen-Jimenez; Richard H. Friend; Henning Sirringhaus
• Keywords: Hysteresis

Hysteresis-free operational stable perovskite FETs is demonstrated through ionic passivation and crystal modification.