Nanoscale flexible organic thin-film transistors

• DOI: 10.1126/sciadv.abm9845
• Publication Date: 2022-04-01T17:59:57Z
• Authors: Ute Zschieschang; Ulrike Waizmann; Jürgen Weis; James W. Borchert; Hagen Klauk
• Keywords: 0103 physical sciences; Physical and Materials Sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 7. Clean energy

Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small 200 nm gate-to-contact overlaps 100 on glass flexible transparent polymeric substrates. The have on/off current ratios large 4 × 10 9 subthreshold swings 70 mV/decade, the up 8 low 80 mV/decade. These are largest reported date for nanoscale transistors. Inverters based two a length of display characteristic switching-delay time constants between 40 ns at supply voltages 1 2 V, corresponding voltage–normalized frequency about 6 MHz/V. This is highest voltage-normalized dynamic performance fabricated by maskless lithography.