Tunable ion energy barrier modulation through aliovalent halide doping for reliable and dynamic memristive neuromorphic systems

• DOI: 10.1126/sciadv.adm7221
• Publication Date: 2024-06-07T17:58:50Z
• Authors: Jongmin Bae; Choah Kwon; See-On Park; Hakcheon Jeong; Taehoon Park; Taehwan Jang; Yoonho Cho; Sangtae Kim; Shinhyun Choi
• Keywords: Neuromorphic engineering; Memristor

Memristive neuromorphic computing has emerged as a promising paradigm for the upcoming artificial intelligence era, offering low power consumption and high speed. However, its commercialization remains challenging due to reliability issues from stochastic ion movements. Here, we propose an innovative method enhance memristive uniformity performance through aliovalent halide doping. By introducing fluorine concentration into dynamic TiO 2− x memristors, experimentally demonstrate reduced device variations, improved switching speeds, enhanced windows. Atomistic simulations of amorphous reveal that fluoride ions attract oxygen vacancies, improving reversible redistribution uniformity. A number migration barrier calculations statistically show also reduce energies nearby facilitating ionic diffusion high-speed switching. The detailed Voronoi volume analysis further suggests design principles in terms migrating species’ electrostatic repulsion barriers. This work presents methodology fabrication reliable memristor devices, contributing realization hardware-based systems.