Ferroelectric tunnel junctions integrated on semiconductors with enhanced fatigue resistance

• DOI: 10.1126/sciadv.ads0724
• Publication Date: 2025-04-11T17:59:46Z
• Authors: Ningchong Zheng; Jiayi Li; Haoying Sun; Yipeng Zang; Peijie Jiao; Cong Shen; Xingyu Jiang; Yidong Xia; Yu Deng; Di Wu; Xiaoqing Pan; Yuefeng Nie
• Keywords: Arsenide

Oxide-based ferroelectric tunnel junctions (FTJs) show promise for nonvolatile memory and neuromorphic applications, making their integration with existing semiconductor technologies highly desirable. Furthermore, resistance fatigue in current silicon-based remains a critical issue. Understanding this mechanism semiconductor-integrated FTJ is essential yet unresolved. Here, we systematically investigate the performance of ultrathin bismuth ferrite BiFeO 3 (BFO)–based FTJs integrated various semiconductors. Notably, BFO/gallium arsenide exhibits superior characteristics (>10 8 cycles), surpassing BFO/silicon 6 cycles) even approaching epitaxial oxide 9 cycles). The atomic-scale revealed as lattice structure collapse caused by oxygen vacancy accumulation BFO near semiconductors after repeated switching. enhanced fatigue-resistant behavior due to gallium arsenide’s weak affinity, resulting fewer vacancies. These findings provide deeper insights into pave way fabricating practical applications.