MgB 2 Superconducting Thin Films with a Transition Temperature of 39 Kelvin

• DOI: 10.1126/science.1060822
• Publication Date: 2002-07-27T09:52:41Z
• Authors: W. N. Kang; Hyeong-Jin Kim; Eun-Mi Choi; C. U. Jung; Sung-Ik Lee
• Keywords: Pulsed Laser Deposition; Transition temperature; Deposition

We report the growth of high-quality c-axis-oriented epitaxial MgB2 thin films by using a pulsed laser deposition technique. The grown on (1`1 0 2) Al2O3 substrates show Tc 39 K. critical current density in zero field is ~ 6 x 10^6 A/cm2 at 5 K and 3 10^5 A/cm^2 35 K, suggesting that this compound has great potential for electronic device applications, such as microwave devices superconducting quantum interference devices. For deposited Al2O3, X-ray diffraction patterns indicate highly crystal structure perpendicular to substrate surface.