Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

• DOI: 10.1126/science.1086608
• Publication Date: 2003-07-15T00:21:04Z
• Authors: D. Chiba; M. Yamanouchi; F. Matsukura; H. Ohno
• Keywords: Magnetic semiconductor

We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, which low-density carriers are responsible for the interaction. The coercive force H C at reversal occurs can be manipulated by modifying carrier density through application electric fields gated structure. Electrically assisted reversal, as well demagnetization, has been demonstrated effect. This offers functionality not previously accessible magnetic materials and may become useful reversing nanoscale bits ultrahigh-density information storage.