Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

• DOI: 10.1126/science.1086608
• Publication Date: 2003-07-15T00:21:04Z
• Authors: D. Chiba; M. Yamanouchi; F. Matsukura; H. Ohno
• Keywords: 02 engineering and technology; 0210 nano-technology

We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force H C at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.