Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution

• DOI: 10.1126/science.1091600
• Publication Date: 2004-02-05T21:58:16Z
• Authors: Ho-Ki Lyeo; A. A. Khajetoorians; Li Shi; Kevin P. Pipe; Rajeev J. Ram; Ali Shakouri; C. K. Shih
• Keywords: Nanometre; Thermoelectric generator

We have probed the local thermoelectric power of semiconductor nanostructures with use ultrahigh-vacuum scanning microscopy. When applied to a p-n junction, this method reveals that changes its sign abruptly within 2 nanometers across junction. Because correlates electronic structure, we can profile nanometer spatial resolution power, band structures, and carrier concentrations junctions constitute building blocks thermoelectric, electronic, optoelectronic devices.