Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

• DOI: 10.1126/science.1179963
• Publication Date: 2009-12-10T22:53:04Z
• Authors: Tsuyoshi Sekitani; Tomoyuki Yokota; Ute Zschieschang; Hagen Klauk; Siegfried Bauer; Ken Takeuchi; Makoto Takamiya; Takayasu Sakurai; Takao Someya
• Keywords: Non-Volatile Memory; Flexible Electronics; Flash Memory

Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise 2-nanometer-thick molecular self-assembled monolayer and 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the allows very program erase voltages (< or = 6 volts) to produce large, nonvolatile, reversible threshold-voltage shift. endure more than 1000 cycles, which is within two orders magnitude silicon-based floating-gate widely employed flash memory. By integrating array pressure-sensitive rubber sheet, sensor matrix detects spatial distribution applied mechanical pressure stores analog input as two-dimensional image over long periods time.