Electrical Wind Force–Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires

R-Phase Crystal (programming language)
DOI: 10.1126/science.1220119 Publication Date: 2012-06-21T23:53:18Z
ABSTRACT
Phase-change materials undergo rapid and reversible crystalline-to-amorphous structural transformation are being used for nonvolatile memory devices. However, the mechanism remains poorly understood. We have studied effect of electrical pulses on phase change in a single-crystalline Ge(2)Sb(2)Te(5) (GST) nanowire device by situ transmission electron microscopy. show that produce dislocations crystalline GST, which become mobile glide direction hole-carrier motion. The continuous increase density moving unidirectionally material leads to dislocation jamming, eventually induces with sharp interface spanning entire cross section. dislocation-templated amorphization explains large on/off resistance ratio device.
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