Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

• DOI: 10.1126/science.aap9195
• Publication Date: 2018-06-14T18:05:33Z
• Authors: Chenguang Qiu; Fei Liu; Lin Xu; Bing Deng; Mengmeng Xiao; Jia Si; Li Lin; Zhiyong Zhang; Jian Wang; Hong Guo; Hailin Peng; Lian-Mao Peng
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Cooler electrons for transistors

The operating power of field-effect transistors is constrained in part by the minimum change in voltage needed to change the current output. This subthreshold swing (SS) limit is caused by hotter electrons from a thermal electron source leaking over the potential of the gate electrode. Qiu et al. show that graphene can act as a Dirac source that creates a narrower distribution of electron energies. When coupled to a carbon nanotube channel, the decrease in SS would allow the supply voltage to be decreased from 0.7 to 0.5 volts.

Science , this issue p. 387