Electrical and optical control of single spins integrated in scalable semiconductor devices

• DOI: 10.1126/science.aax9406
• Publication Date: 2019-12-06T00:15:30Z
• Authors: Christopher P. An...; Alexandre Bourassa; Kevin C. Miao; Gary Wolfowicz; Peter J. Mintun; Alexander L. Crook; Hiroshi Abe; Jawad Ul Hassan; Nguyen T. Son; Takeshi Ohshima; David D. Awschalom
• Keywords: Quantum Physics; Condensed Matter - Materials Science; Condensed Matter - Mesoscale and Nanoscale Physics; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 02 engineering and technology; 01 natural sciences; 0103 physical sciences; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Quantum Physics (quant-ph); 0210 nano-technology

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins commercially available p-i-n structures and fabricated diodes modulate local electrical environment defects. These devices enable deterministic charge-state control broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results narrowing optical linewidths by more than 50-fold, approaching lifetime limit. demonstrate method for mitigating ubiquitous problem spectral diffusion solid-state emitters engineering while using classical scalable, spin-based quantum systems.