Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

• DOI: 10.1126/science.abb7023
• Publication Date: 2020-08-18T00:23:46Z
• Authors: Yi-Lun Hong; Zhibo Liu; Lei Wang; Tianya Zhou; Wei Ma; Chuan Xu; Shun Feng; Long Chen; Mao-Lin Chen; Dong-Ming Sun; Xing-Qiu Chen; Hui-Ming Cheng; Wencai Ren
• Keywords: Deposition

Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth nonlayered molybdenum nitride passivate its surface, which enabled centimeter-scale films MoSi2N4 This was built up by septuple atomic layers N-Si-N-Mo-N-Si-N, can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. material exhibited semiconducting behavior (bandgap ~1.94 electron volts), high strength (~66 gigapascals), excellent ambient stability. Density functional theory calculations predict large family such structured materials, including semiconductors, metals, magnetic half-metals.