Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

• DOI: 10.1126/science.abk3195
• Publication Date: 2022-05-12T17:58:01Z
• Authors: Seunghun Kang; Woo-Sung Jang; Anna N. Morozovska; Owoong Kwon; Yeongrok Jin; Young-Hoon Kim; Hagyoul Bae; Chenxi Wang; Sang-Hyeok Yang; Alex Belianinov; Steven Randolph; Eugene A. Eliseev; Liam Collins; Yeehyun Park; Sanghyun Jo; Min-Hyoung Jung; Kyoung-June Go; Hae Won Cho; Si-Young Choi; Jae Hyuck Jang; Sunkook Kim; Hu Young Jeong; Jaekwang Lee; Olga S. Ovchinnikova; Jinseong Heo; Sergei V. Kalinin; Young-Min Kim; Yunseok Kim
• Keywords: 02 engineering and technology; 0210 nano-technology

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric semiconductor materials. The emergence hafnium oxide (HfO2)-based ferroelectrics that are compatible with atomic-layer deposition has opened interesting promising avenues research. However, the origins ferroelectricity pathways to controlling it HfO2 still mysterious. We demonstrate local helium (He) implantation can activate these possible competing mechanisms, including He ion-induced molar volume changes, vacancy redistribution, generation, activation mobility, analyzed. These findings both reveal this system open for nanoengineered binary ferroelectrics.