SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION

• DOI: 10.1142/s0129156411006374
• Publication Date: 2011-04-25T09:41:06Z
• Authors: W. STILLMAN; C. DONAIS; S. RUMYANTSEV; M. SHUR; D. VEKSLER; C. HOBBS; C. SMITH; G. BERSUKER; W. TAYLOR; R. JAMMY
• Keywords: 0103 physical sciences; 01 natural sciences

We report on terahertz detection (from 0.2 THz to 2.4 THz) by Si FinFETs of different widths (with 2, 20, and 200 fins connected in parallel). FinFETs (with a small number of fins and with feature sizes as short as 20 nm to 40 nm) showed a very high responsivity (far above that previously measured for standard CMOS). We explain this improvement by negligible narrow channel effects.