Fabrication and characteristic of force sensor based on piezoelectric effect of Li-doped ZnO thin films

• DOI: 10.1142/s0217984918502081
• Publication Date: 2018-06-08T04:27:46Z
• Authors: Chunpeng Ai; Xiaofeng Zhao; Yinan Bai; Yi Li; Dianzhong Wen
• Keywords: 02 engineering and technology; 0210 nano-technology

In this paper, a force sensor based on piezoelectric effect of Li-doped ZnO (LZO) thin films was presented, which constituted by Pt/LZO/Pt/Ti functional layers and Si cantilever beam. The chips were designed fabricated micro electro-mechanical system (MEMS) technology silicon wafer with [Formula: see text] orientation. sandwich structure, the top electrode (TE) Pt bottom (BE) Pt/Ti, LZO prepared radio frequency (RF) magnetron sputtering method. microstructure morphology analyzed through X-ray diffraction (XRD) field emission scanning electron microscope (FE-SEM), analysis results shows that highly c-axis orientation uniform grain size distribution under power 220 W. experimental show, when external loaded tip beam, output voltage 280.3 mV at 5 N, sensitivity proposed 46.1 mV/N in range 1–5 N.