Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

• DOI: 10.1143/apex.2.071404
• Publication Date: 2009-07-10T05:25:21Z
• Authors: Choong Hyun Lee; Toshiyuki Tabata; Tomonori Nishimura; Kosuke Nagashio; Koji Kita; Akira Toriumi
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

High-pressure oxidation (HPO) of germanium (Ge) for improving electrical properties Ge/GeO2 stacks was investigated. The capacitance–voltage (C–V) characteristics metal/GeO2/Ge capacitors fabricated with HPO revealed improved without any post-deposition annealing, and the interface states density (Dit) reduced to 2×1011 eV-1 cm-2 near midgap. Moreover, refractive index thermally oxidized GeO2 increased by HPO. It is also discussed from a thermodynamic viewpoint system that GeO desorption could be efficiently suppressed