High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

• DOI: 10.1143/apex.3.122102
• Publication Date: 2010-11-26T03:33:47Z
• Authors: Shuichiro Yamamoto; Yuji Zhao; Chih-Chien Pan; Roy B. Chung; Kenji Fujito; Junichi Sonoda; Steven P. DenBaars; Shuji Nakamura
• Keywords: Quantum Efficiency; Green-light; Laser linewidth; Duty cycle

We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (2021) GaN substrates by metal organic chemical vapor deposition. The output power external quantum efficiency at a driving current of 20 mA under pulsed condition with 10% duty cycle are 9.9 mW 20.4% for the LED 5.7 12.6% LED, respectively. electroluminescence linewidth narrowing, which is related to band-filling effect caused potential fluctuations, not observed.