Control of Rectifying and Resistive Switching Behavior in BiFeO$_{3}$ Thin Films

• DOI: 10.1143/apex.4.095802
• Publication Date: 2011-08-18T01:24:57Z
• Authors: Yao Shuai; Shengqiang Zhou; Chuangui Wu; Wanli Zhang; Danilo Bürger; Stefan Slesazeck; Thomas Mikolajick; Manfred Helm; Heidemarie Schmidt
• Keywords: Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 02 engineering and technology; 0210 nano-technology

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.<br/>13 pages, 3 fitures<br/>