Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

• DOI: 10.1143/apex.5.015503
• Publication Date: 2012-01-12T00:49:36Z
• Authors: Jan Devenson; Vaidas Pačebutas; Renata Butkutė; Alexei Baranov; Arūnas Krotkus
• Keywords: 02 engineering and technology; 0210 nano-technology

InyGa1-yAs1-xBix layers on InP:Fe (100) substrates have been grown by molecular beam epitaxy. Up to 7% of Bi incorporation has been confirmed by optical and structural analyses of grown samples. Photoluminescence signals at wavelengths up to 3 µm have been observed, implying InyGa1-yAs1-xBix to be a prospective material for mid-infrared applications. A weak band-gap temperature sensitivity of Bi-containing InGaAs has been evaluated from optical absorption measurements.