Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

• DOI: 10.1143/apex.5.055504
• Publication Date: 2012-05-11T06:20:47Z
• Authors: Yoshinao Kumagai; Yuki Kubota; Toru Nagashima; Toru Kinoshita; Rafael Dalmau; Raoul Schlesser; Baxter Moody; Jinqiao Xie; Hisashi Murakami; Akinori Koukitu; Zlatko Sitar
• Keywords: Vapor phase

The structural and optical quality of a freestanding AlN substrate prepared from thick layer grown by hydride vapor phase epitaxy (HVPE) on bulk (0001)AlN physical transport (PVT) were investigated. HVPE-AlN was crack- stress-free. High-resolution X-ray diffraction ω-rocking curves symmetric (0002) skew-symmetric (1011) reflections had small full widths at half maximum (FWHMs) 31 32 arcsec, respectively. Deep-ultraviolet transparency the higher than that PVT-AlN substrate, which related to lower concentrations C, O impurities, Al vacancy.