AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

• DOI: 10.1143/apex.5.082101
• Publication Date: 2012-07-13T18:38:31Z
• Authors: Max Shatalov; Wenhong Sun; Alex Lunev; Xuhong Hu; Alex Dobrinsky; Yuri Bilenko; Jinwei Yang; Michael Shur; Remis Gaska; Craig Moe; Gregory Garrett; Michael Wraback
• Keywords: Quantum Efficiency; Cladding (metalworking); Ultraviolet; Ohmic contact

Improvements of the internal quantum efficiency by reduction threading dislocation density and light extraction using UV transparent p-type cladding contact layers, reflecting ohmic contact, chip encapsulation with optimized shape refractive index allowed us to obtain external 10.4% at 20 mA CW current output power up 9.3 mW 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates.