Migration-Enhanced Epitaxy of GaAs and AlGaAs

• DOI: 10.1143/jjap.27.169
• Publication Date: 2005-02-23T01:20:35Z
• Authors: Yoshiji Horikoshi; Minoru Kawashima; Hiroshi Yamaguchi
• Keywords: Reflection

Surface migration is effectively enhanced by evaporating Ga or Al atoms onto a clean GaAs surface under an As-free low As pressure atmosphere. This characteristic was utilized alternately supplying and/or and A S 4 to the substrate for growing atomically-flat GaAs-AlGaAs heterointerfaces, also high-quality AlGaAs layers at very temperatures. The characteristics of adatoms have been investigated through reflection high-energy electron diffraction measurements. It found that different growth mechanisms are operative in this method both high Both these expected yield flat heterojunction interfaces. By applying method, single quantum-well structures with excellent photoluminescence were grown temperatures 200 300degC, respectively.