Formation of Reliable HfO2/HfSixOyGate-Dielectric for Metal-Oxide-Semiconductor Devices

• DOI: 10.1143/jjap.41.6904
• Publication Date: 2002-12-27T02:48:19Z
• Authors: Yong Chun Quan; Jang Eun Lee; Hyeoksu Kang; Yonghan Roh; Donggeun Jung; Cheol-Woong Yang
• Keywords: Equivalent oxide thickness; High-κ dielectric; Metal gate

The HfO2/HfSixOy thin film for gate oxides in the metal-oxide-semiconductor (MOS) device is obtained by a simple method which involves oxidation of sputtered Hf metal films on Si followed N2 annealing. Based transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses, we found that high-quality stack layer formed Si. hysteresis window Pd–HfO2/HfSixOy–Si MOS capacitors was negligible (i.e., less than 10 mV). equivalent oxide thickness (EOT) leakage current density were 1.2 nm 2×10-3 A/cm2 at 1.5 V (after compensating flatband voltage V), respectively. We suggested low characteristics due to presence amorphous HfSixOy buffer layer. conduction mechanism identified as Poole-Frenkel emission Fowler-Nordheim tunneling high electric field regions,